Transmission electron microscope radiation damage of 4H and 6H SiC studied by photoluminescence spectroscopy-Reference-Cited by-同舟云学术

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Transmission electron microscope radiation damage of 4H and 6H SiC studied by photoluminescence spectroscopy

Published:2002-12 Issue:12 Volume:11 Page:1923-1945
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Steeds J.W,Evans G.A,Danks L.R,Furkert S,Voegeli W,Ismail M.M,Carosella F

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure

2. The spin state of the neutral silicon vacancy in 3C–SiC

3. Metastability of the Neutral Silicon Vacancy in 4H-SiC

4. Comprehensiveab initiostudy of properties of monovacancies and antisites in 4H-SiC

5. Creation and mobility of self-interstitials in diamond by use of a transmission electron microscope and their subsequent study by photoluminescence microscopy

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1. Analysis, recent challenges and capabilities of spin-photon interfaces in Silicon carbide-on-insulator;npj Nanophotonics;2024-08-02

2. Depth profiling of the Si ion implantation induced disorder and strain in 4H-SiC and the thermal annealing recovery;Applied Surface Science;2024-08

3. β -rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination;Applied Physics Letters;2024-01-22

4. Ab Initio Study of Neutral Point Defect Properties in 6h-Sic Based on the Scan Functional;2024

5. Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2023-12

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