The effect of high pressure gaseous He, Ar and N2 on the photoconductivity of deformed Ge-Reference-Cited by-同舟云学术

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The effect of high pressure gaseous He, Ar and N2 on the photoconductivity of deformed Ge

Published:1984-01 Issue:6 Volume:45 Page:671-674
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Pohoryles B.,Jung J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference12 articles.

1. Copper Precipitation on Dislocations in Silicon

2. High pressure in research and industry;Jung,1982

3. LXXXVII. Theory of dislocations in germanium

4. CXXIV. Statistics of the occupation of dislocation acceptor centres

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EFFECTS OF THE He ATOMS ON DISLOCATION CORE STRUCTURE IN SEMICONDUCTORS;Defect Control in Semiconductors;1990

2. Helium pressure effects on photoconductivity and position of dislocation deep electron states in plastically deformed Ge;Physica Status Solidi (a);1989-11-16

3. Driven reconstruction of dislocation cores in semiconductors;Philosophical Magazine Letters;1988-07

4. Electrical and Optical Properties;Extended Defects in Germanium

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