The GaGaAsGaP system: Phase chemistry and solution growth of GaAsχP1−χ-Reference-Cited by-同舟云学术

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The GaGaAsGaP system: Phase chemistry and solution growth of GaAsχP1−χ

Published:1969-05 Issue:5 Volume:30 Page:1083-1090
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Panish Morton B.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference22 articles.

1. Ga-Al-As: Phase, thermodynamic and optical properties

2. Conf. Preparation of Electronic Materials;Panish,1968

3. TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GaAs LASERS

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1. Evidence and control of unintentional As-rich shells in GaAs1–x P x nanowires;Nanotechnology;2019-04-29

2. Back Matter;Ternary Alloys Based on III-V Semiconductors;2017-07-26

3. Distribution Coefficient of Arsenic Durng Liquid-Phase Epitaxy Layer Growth of Phosphide-Arsenide of Gallium;Advanced Materials Research;2014-10

4. As-Ga-P (Arsenic-Gallium-Phosphorus);Non-Ferrous Metal Systems. Part 1;2006

5. Liquid-phase epitaxial growth of GaAsxP1 − x layers on GaP substrates;Journal of Crystal Growth;1997-08

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