Capture diameter of dislocations in low-angle grain boundaries in germanium
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference5 articles.
1. Mueller R. K. To be published.
2. Properties of Grain Boundaries in Gold-Doped Germanium
3. Recombination in Plastically Deformed Germanium
4. Experimental Determination of Injected Carrier Recombination Rates at Dislocations in Semiconductors
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. THE GRAIN BOUNDARY: A SYSTEM FOR THE STUDY OF SURFACES*;Annals of the New York Academy of Sciences;2006-12-22
2. Charge transport in low angle grain boundaries in germanium;Journal of Physics and Chemistry of Solids;1968-09
3. Dangling Bonds and Dislocations in Semiconductors;Physical Review;1966-06-10
4. Grain Boundary Conductance in InSb;Journal of Applied Physics;1964-03
5. Galvanomagnetic properties of grain boundaries in germanium bicrystals from 1.25 to 240°K∗;Journal of Physics and Chemistry of Solids;1962-07
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