Deep level structure and compensation mechanism in In-doped CdTe crystals

Author:

Ido T.,Heurtel A.,Triboulet R.,Marfaing Y.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Unusual Surface Ligand Doping-Induced p-Type Quantum Dot Solids and Their Application in Solar Cells;ACS Applied Materials & Interfaces;2020-11-19

2. Comparison of In doped and In, Pb co-doped Cd0.9Zn0.1Te;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2015-08

3. Characterization of CdZnTe co-doped with indium and lead;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2015-01

4. Investigation of Electrically Active Defects in n-CdS/p-CdTe Solar Cells;ECS Transactions;2011-10-04

5. Compensation effect in undoped polycrystalline CdTe synthesized under nonequilibrium conditions;Physics of the Solid State;2011-08

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