Author:
Yueyuan Xia,Chunyu Tan,Zongshuang Zheng,Qichu Zhang,Peiran Zhu,Jiarui Liu,Hong Yang,Xierong Hu,Lixin Chen
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Cited by
3 articles.
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1. Depth profiles of implanted 18F, 79Br, and 132Xe in silicon in the energy range 85–600 keV;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-05
2. Electronic stopping powers derived from range measurements for ions at low velocity;Vacuum;1989-01
3. Stopping power of 100–600 keV F+, Ar+, As+, Br+ and Xe+ ions in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1988-06