The non-stoichiometry and the point defect structure of cuprous oxide (Cu2−δO)-Reference-Cited by-同舟云学术

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The non-stoichiometry and the point defect structure of cuprous oxide (Cu2−δO)

Published:1990-01 Issue:11 Volume:51 Page:1263-1275
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Xue J.,Dieckmann R.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference37 articles.

1. Diffusion in Semiconductors;Boltaks,1963

2. Über die Halbleitereigenschaften des Kupferoxyduls. IV Leitfähigkeitsmessungen bei hohen Temperaturen

3. Nonstoichiometry, Diffusion, and Electrical Conductivity in Binary Metal Oxides;Kofstad,1972

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1. A surface science view onto cuprous oxide: Growth, termination, electronic structure and optical response;Surface Science Reports;2024-03

2. Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN;Materials;2024-03-01

3. Micro-Vickers Hardness of Cu and Cu2O Dual Phase Composite Films Electrodeposited from Acidic Aqueous Solutions Containing Polyethylene Glycol;Crystals;2023-11-30

4. Tracking Atomic Diffusion in Surface and Bulk CuO via Neural Network-Based Molecular Dynamics;The Journal of Physical Chemistry C;2023-04-03

5. Coupled oxygen desorption and structural reconstruction accompanying reduction of copper oxide;The Journal of Chemical Physics;2023-02-03

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