Microwave dielectric relaxation of silicon crystals-Reference-Cited by-同舟云学术

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Microwave dielectric relaxation of silicon crystals

Published:1994-11 Issue:11 Volume:55 Page:1369-1373
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Ding X.Z,Lu Taijing ,Ong C.K,Tan B.T.G

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference18 articles.

1. Infra-red Studies of Crystal Defects;Newman,1973

2. Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry

3. Handbook of Optical Constants of Solids;Edwards,1985

4. Determination of Oxygen Concentration in Single‐Side Polished Czochralski‐Grown Silicon Wafers by p‐Polarized Brewster Angle Incidence Infrared Spectroscopy

5. Far‐infrared absorption of silicon crystals

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silicon Implementation of Planar Topologies;Si-RF Technology;2019

2. Refractive index at infrared wavelengths and dielectric permittivity of pure and fluorinated silicon dioxide from measurements of their thin films deposited on Si;Journal of Physics D: Applied Physics;2004-04-15

3. Dielectric properties of thin solid films formed on silicon;Journal of Materials Science: Materials in Electronics;2001

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