Intervalley scattering by donor ions in germanium-Reference-Cited by-同舟云学术

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Intervalley scattering by donor ions in germanium

Published:1964-06 Issue:6 Volume:25 Page:567-570
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Price P.J.,Hartman R.L.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference8 articles.

1. Acoustoelectric Effect inn-Type Germanium

2. The factors 13 correspond to the fact that weinreich et al. specify the transition rate to all three other valleys, whereas our v is the rate to one of the three.

3. Theory of Transport Effects in Semiconductors: Thermoelectricity

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1. Carrier Anisotropy and Impurity Scattering in Ge at mK Temperatures: Modeling and Comparison to Experiment;Journal of Low Temperature Physics;2012-02-01

2. The envelope representation;Superlattices and Microstructures;1998-03

3. The scattering anisotropy and multivalued distribution of electrons in Si;Semiconductor Science and Technology;1995-07-01

4. References;Modern Problems in Condensed Matter Sciences;1987

5. Anderson transition criterion as found from intervalley acoustoelectron relaxation in heavily doped n-Si;Solid State Communications;1985-10

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