Localized vibrational mode absorption of phosphorus in gallium arsenide
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference30 articles.
1. EFFECT OF DONOR IMPURITIES ON THE DIRECT‐INDIRECT TRANSITION IN Ga(As1 ‐ xPx)
2. Conduction Band Minima ofGa(As1−xPx)
3. Band Structure and Transport Properties of Some 3–5 Compounds
4. Band Structure of Gallium Phosphide from Optical Experiments at High Pressure
5. Pressure Effect on Resistivity ofGa(As1−xPx)
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1. Dielectric response function of GaPAs solid solutions in the vibrational absorption region;Technical Physics;2001-08
2. Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy;Applied Physics Letters;1997-09-08
3. Chapter 4 Local Vibrational Mode Spectroscopy of Defects in III/V Compounds;Imperfections in III/V Materials;1993
4. Effects of local environment on localized vibrational modes of aluminum inAlxGa1−xAs;Physical Review B;1990-12-15
5. Vibrational Infrared and Raman Spectra of Non-Metals;Light and Matter Id / Licht und Materie Id;1984
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