High pressure study of Γ-X mixing in InAs/GaAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference17 articles.
1. Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structures
2. Theory of electronic structure in superlattices
3. Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixing
4. Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsets
5. Type-I–type-II transition of GaAs/AlAs short-period superlattices investigated by photoluminescence spectroscopy under hydrostatic pressure
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1. Band alignment transition from type I to type II in GaAs / AlxGa1-x As quantum ring;Physica E: Low-dimensional Systems and Nanostructures;2021-02
2. Many-valley electron transport in AlGaAs VCSELs;Semiconductor Science and Technology;2017-04-04
3. Photoluminescence studies on self-organized 1.55-μm InAs/InGaAsP/InP quantum dots under hydrostatic pressure;Journal of Applied Physics;2014-07-14
4. Shallow-donor impurity in coupled GaAs/Ga1−xAlxAs quantum well wires: hydrostatic pressure and applied electric field effects;physica status solidi (b);2010-04-07
5. Pressure effects on neutral and charged excitons in self-assembled (In,Ga)As∕GaAsquantum dots;Physical Review B;2005-07-20
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