Spin relaxation of conduction electrons in highly-doped n-type germanium at low temperature
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference28 articles.
1. Some Features of ESR and Spin–Lattice Relaxation of Electrons in Ge and InSb with Different Donor Concentrations
2. Electron spin resonance in As-doped Ge in a wide range of impurity concentration
3. Spin relaxation of conduction electrons in highly doped semiconductors (InSb, Si, Ge)
4. ESR Line Width of As-Doped Germanium in the High Concentration Region
5. Electron Spin Resonance Experiments on Shallow Donors in Germanium
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1. Electron paramagnetic resonance of n -type semiconductors for applications in three-dimensional thermometry;Physical Review Applied;2023-12-13
2. Spin transport and relaxation in germanium;Journal of Physics D: Applied Physics;2018-08-24
3. Non-local electrical spin injection and detection in germanium at room temperature;Applied Physics Letters;2017-10-30
4. Large impact of impurity concentration on spin transport in degenerate n -Ge;Physical Review B;2017-04-14
5. Suppressing the spin relaxation of electrons in silicon;Physical Review B;2017-01-17
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