Determination of the effective mass, carrier relaxation time and hall factor from plasma edge reflection studies in semiconductors
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference14 articles.
1. Optical Properties of Solids;Dixon,1969
2. MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIONS BY INFRARED PLASMA REFLECTION
3. Use of plasma edge reflection measurements in the study of semiconductors
4. Effective mass from plasma edge reflection measurements
5. Free electron effective mass in PbSe and PbSnSe mixed crystals
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The electrical characterisation of semiconductors;Reports on Progress in Physics;1978-02-01
2. Determination of effective mass values by a Kramers-Kronig analysis for variously doped silicon crystals;Infrared Physics;1977-03
3. Effects of mechanical polishing damage on the ir reflectance and attenuated total reflection spectra of n‐type GaAs;Journal of Vacuum Science and Technology;1976-07
4. Effective mass notion in the relativistic Kronig-Penney model;Journal of Physics C: Solid State Physics;1976-03-14
5. Application of free carrier dispersion theory to the optical studies of semiconductors;Journal of Physics and Chemistry of Solids;1976-01
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