Investigation of quenched-in defects in Ge and Si by means of 64Cu-Reference-Cited by-同舟云学术

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Investigation of quenched-in defects in Ge and Si by means of 64Cu

Published:1965-09 Issue:9 Volume:26 Page:1463-1473
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Fuller C.S.,Wolfstirn K.B.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference29 articles.

1. Thermal acceptors in germanium

2. Int. Nat. Conf. on Lattice Defects;Hiraki,1963

3. Copper as an Acceptor Element in Germanium

4. Studies of Vacancies in Dislocation‐Free Ge Crystals

5. Dash W. C., Growth and Perfection of Crystals, p. 361, John Wiley, New York.

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation for purification process of high pure germanium by zone refining method;Journal of Crystal Growth;2017-03

2. Metals in Germanium;Germanium-Based Technologies;2007

3. Copper related diffusion phenomena in germanium and silicon;Materials Science in Semiconductor Processing;2004

4. Diffusion and solubility of copper, silver, and gold in germanium;Physical Review B;1991-06-15

5. The Cu−Ge (Copper-Germanium) system;Bulletin of Alloy Phase Diagrams;1986-02

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