The use of photoemission to investigate the band structure of silicon and other semiconductors-Reference-Cited by-同舟云学术

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The use of photoemission to investigate the band structure of silicon and other semiconductors

Published:1962-12 Issue:12 Volume:23 Page:1817-1820
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Spicer W.E.,Simon R.E.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference19 articles.

1. Interband Transitions in Groups 4, 3-5, and 2-6 Semiconductors

2. Optical Constants of Germanium in the Region 1 to 10 ev

3. Optical Constants of Silicon in the Region 1 to 10 ev

4. Proceedings of the International Conference on Semiconductor Physics;Tauc,1961

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cathodoluminescence of silicon in the visible–ultraviolet region;Physical Review B;1998-05-15

2. Solid-to-solid emission and band-to-band transitions;Physica Status Solidi (a);1975-05-16

3. A Phase Transition and the Photoemissive Quantum Yield at Low Temperatures in Cs3Sb Films;Physica Status Solidi (b);1968

4. REFERENCES;Optical Properties and Band Structure of Semiconductors;1968

5. Photoelectric Emission from InAs: Surface Properties and Interband Transitions;Physical Review;1967-11-15

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