SiGe nanostructures by selective epitaxy and self-assembling
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference31 articles.
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2. Si/Si1-xGexdots grown by selective epitaxy
3. N. Endo, N. Kasai, A. Ishitani, Y. Kurogi, IEEE Int. Elect. Dev. Meeting, Tech. Digest, CH 1973-7/83, 31–34, 1983.
4. see Low dimensional Structures prepared by Epitaxial Growth and Regrowth on Patterned Subst., NATO ASI Series vol. 298, eds. K. Eberl, P.M. Petroff, P. Derneester (Dordrecht: Kluwer) 1995.
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