Magnetic domain wall motion in SrRuO3 thin films-Reference-Cited by-同舟云学术

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Magnetic domain wall motion in SrRuO3 thin films

Published:2020-02 Issue: Volume:187 Page:108390
ISSN:0264-1275
Container-title:Materials & Design
language:en
Short-container-title:Materials & Design

Author:

Zahradník Martin^ORCID,Uhlířová Klára,Maroutian Thomas,Kurij Georg,Agnus Guillaume,Veis Martin,Lecoeur Philippe

Funder

Czech Research Infrastructures

Ministry of Education, Youth and Sports of Czech Republic

GAČR

French Ministry for Europe and Foreign Affairs

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference41 articles.

1. Magnetic properties of SrRuO3 single crystal;Kanbayasi;J. Phys. Soc. Jpn.,1976

2. Structure, physical properties, and applications of SrRuO3 thin films;Koster;Rev. Mod. Phys.,2012

3. Bipolar resistive switching and substrate effect in GdK2Nb5O15 epitaxial thin films with tetragonal tungsten bronze type structure;Allouche;Mater. Des.,2016

4. SrRuO3/SrTiO3/SrRuO3 heterostructures for magnetic tunnel junctions;Herranz;J. Appl. Physiol.,2003

5. Negative spin-polarization of SrRuO3;Worledge;Phys. Rev. Lett.,2000

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1. Strain-insensitive ferromagnetic SrRuO3 thin films with ferrimagnetic CoFe2O4 buffer layer;Current Applied Physics;2024-10

2. Anisotropic magnetic and magnetotransport properties in morphologically distinct Nd_0.6Sr_0.4MnO₃ thin films;Physica Scripta;2023-06-13

3. Origin of Topological Hall‐Like Feature in Epitaxial SrRuO₃ Thin Films;Advanced Electronic Materials;2023-04-23

4. Manipulating topological Hall-like signatures by interface engineering in epitaxial ruthenate/manganite heterostructures;Nanoscale;2023

5. Anisotropy and Current Control of Magnetization in SrRuO3/SrTiO3 Heterostructures for Spin-Memristors;Frontiers in Nanotechnology;2021-05-18

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