Author:
He Jiaqi,Zhang Xiong,Zhao Jianguo,Chen Shuai,Wu Zili,Fan Aijie,Zhu Youhua,Wang Meiyu,Feng Zhe Chuan,Hu Guohua,Cui Yiping
Funder
Key Research and Development Project of Science and Technology Department of Jiangsu Province
Fundamental Research Funds of Postgraduate Research and Practice Innovation Program for the Central Universities of Jiangsu Province
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference26 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides;Khan;Nat. Photonics,2008
2. High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111);Li;Appl. Phys. Express,2017
3. M. Jo, et al., Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates, in: D. Feezell, et al., (Ed.), Phys. Status Solidi C: Curr. Topics Solid State Phys, Vol 14, No 8, 2017.
4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes;Waltereit;Nature,2000
5. Progress in the growth of nonpolar gallium nitride;Haskell;Phys. Status Solidi (b),2007
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献