Nanotechnology copper interconnect processes integrations for high aspect ratio without middle etching stop layer
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
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3. Process improvement of 0.13μm Cu/low K dual damascene interconnection;Li;Microelectron Reliab,2005
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5. Resist pattern collapse with top rounding resist profile;Lee;Jpn J Appl Phys,2003
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