Study on the structural, optical and electrical properties of N-doped Ga2O3 films synthesized by sol-gel method

Author:

Zhang Q.,Deng J.X.,Li R.D.,Meng X.,Hu L.N.,Luo J.X.,Kong L.,Meng L.J.,Du J.,Almaev Aleksei V.,Gao H.L.,Yang Q.Q.,Wang G.S.,Meng J.H.,Wang X.L.,Yang X.L.,Wang J.Y.

Funder

Chinese Academy of Sciences

Natural Science Foundation of Beijing Municipality

Beijing Nova Program

Lianyungang Science and Technology Bureau

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3;Dong;Sci. Rep.,2017

2. Photovoltaic and flexible deep ultraviolet wavelength detector based on novel β-Ga2O3/muscovite heteroepitaxy;Tak;Sci. Rep.,2020

3. Study on the structure and properties of gallium bismuth oxide alloy thin films prepared by sol-gel method;Zhang;J. Sol. Gel Sci. Technol.,2022

4. Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga2O3 films;Wu;Mater. Today Phys.,2021

5. β-Ga2O3 nanowires: synthesis, characterization, and p-channel field-effect transistor;Chang;Appl. Phys. Lett.,2005

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