Programming and read performances optimization of phase-change memory via multi-objective genetic algorithm and improved finite element analysis-Reference-Cited by-同舟云学术

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Programming and read performances optimization of phase-change memory via multi-objective genetic algorithm and improved finite element analysis

Published:2024-01 Issue: Volume:169 Page:107914
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Tang Pu,Tao Ming,Xiao Jing

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference41 articles.

1. Current status of the phase change memory and its future;Lai,2003

2. Phase-change memory RESET model based on detailed cell cooling profile;Kwong;IEEE Trans. Electron. Dev.,2011

3. A compact model of phase-change memory based on rate equations of crystallization and amorphization;Sonoda;IEEE Trans. Electron. Dev.,2008

4. Electrical transport in crystalline and amorphous chalcogenide;Ielmini,2018

5. Programming current reduction via enhanced asymmetry-induced thermoelectric effects in vertical nanopillar phase-change memory cells;Bahl;IEEE Trans. Electron. Dev.,2015

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1. Analysis and prediction model based on ARMI-GARCH and single objective optimization;Proceedings of the 2023 6th International Conference on E-Business, Information Management and Computer Science;2023-12-30

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