Investigation of process parameter variation in the memristor based resistive random access memory (RRAM): Effect of device size variations-Reference-Cited by-同舟云学术

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Investigation of process parameter variation in the memristor based resistive random access memory (RRAM): Effect of device size variations

Published:2015-07 Issue: Volume:35 Page:174-180
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Dongale T.D.,Patil K.P.,Mullani S.B.,More K.V.,Delekar S.D.,Patil P.S.,Gaikwad P.K.,Kamat R.K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Memristor-The missing circuit element

2. Memory effects in complex materials and nanoscale systems

3. An Elementary Note on Skin Hydration Measurement Using Memristive Effect

4. Resistive switching in zinc–tin-oxide

5. Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor

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2. Emulating biological synaptic characteristics of HfOx/AlN-based 3D vertical resistive memory for neuromorphic systems;The Journal of Chemical Physics;2024-04-08

3. Overshoot‐Suppressed Memristor Crossbar Array with High Yield by AlO_x Oxidation for Neuromorphic System;Advanced Materials Technologies;2024-04-08

4. Enabling Neuromorphic Computing for Artificial Intelligence with Hardware-Software Co-Design;Neuromorphic Computing;2023-11-15

5. Full Hardware Image Encryption for Oscillating Memristor Circuits;Advanced Materials Technologies;2022-12-25

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