Corrigendum to “Effects of oxygen vacancies on ferroelectric characteristics of RF-sputtered Hf0.5Zr0.5O2” [Mater. Sci. Semicond. Process. 160 (2023) 107401]
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Published:2023-06
Issue:
Volume:160
Page:107465
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Han Changhyeon,Kwon Ki Ryun,Kim Jeonghan,Yim Jiyong,Kim Sangwoo,Park Eun Chan,You Ji Won,Jeong Soi,Choi Rino,Kwon Daewoong
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science