Optoelectronic properties of CdTe/Si heterojunction prepared by pulsed Nd:YAG-laser deposition technique-Reference-Cited by-同舟云学术

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Optoelectronic properties of CdTe/Si heterojunction prepared by pulsed Nd:YAG-laser deposition technique

Published:2007-02 Issue:1 Volume:10 Page:19-23
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ismail Raid A.,Hassan Khaki I.,Abdulrazaq Omar A.,Abode Wesam H.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. CdS/CdTe solar cells by the screen-printing-sintering technique: Fabrication, photovoltaic properties and applications

2. Growth of CdTe on hydrogen-terminated Si(111)

3. Feredikes C, Britt J, Ma Y, Kilian L. In: 23rd IEEE PVSC, 1993. p. 83.

4. Thin Films: Past, Present, Future

5. Effects of Cu on CdTe / CdS Heterojunction Solar Cells with Au/Cu Contacts

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