Author:
Terekhov Vladimir A.,Nesterov Dmitriy N.,Barkov Konstantin A.,Domashevskaya Evelina P.,Konovalov Aleksandr V.,Fomenko Yuriy L.,Seredin Pavel V.,Goloshchapov Dmitry L.,Popov Anatoliy I.,Barinov Aleksey D.,Andreeshchev Vyacheslav M.,Zanin Igor E.,Ivkov Sergey A.,Loktionova Oksana E.
Funder
RFBR
Ministry of Science and Higher Education of Russia Federation
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. High-voltage planar structure using SiO2-SIPOS-SiO2Film;Mimura;IEEE Electron. Device Lett.,1985
2. Field-Effect and Bipolar Power Transistor Physics;Blicher,1981
3. Obtaining semi-insulating silicon for high-voltage devices, Technology and design in electronic equipment;Turtsevich;Technol. Des. Electron. Equip.,2008
4. Crystallographic study of semi-insulating polycrystalline silicon (SIPOS) doped with oxygen atoms;Hamasaki;J. Appl. Phys.,1978
5. Carrier transport in oxygen-rich polycrystalline-silicon films;Tarng;J. Appl. Phys.,1978
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