Evaluation of LEC and VGF-InAs substrates through surface defect characterization and epitaxy growth-Reference-Cited by-同舟云学术

Evaluation of LEC and VGF-InAs substrates through surface defect characterization and epitaxy growth

Published:2021-04 Issue: Volume:125 Page:105624
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Liu Lijie^ORCID,Zhao Youwen,Huang Yong,Zhao Yu,Xie Hui,Wang Jun,Wang Yingli,Shen Guiying

Funder

Chinese Academy of Sciences

Suzhou Institute of Nanotechnology, Chinese Academy of Sciences

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

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3. Wet etching for InAs-based InAs/Ga(As)Sb superlattice long wavelength infrared detectors[J];Jia;J. Infrared Millim. Waves,2019

4. Growth and properties of high quality InAs single crystals;Zhao;[J] Chinese Journal of Semiconductors,2006

5. Compound Semiconductor Bulk Materials and Characterizations by World Scientific;Oda,2007

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