Unveiling the effects of thallium and bismuth p-n doping on germanium-based clusters (n5 to n12) for applications in semiconductor materials
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Published:2024-12
Issue:
Volume:184
Page:108818
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Zafar Ayesha,
Altaf Yasir,
Zafar Aiman,
Hashmi Muhammad Ali,
Ahmed FahimORCID,
Rubab Syeda Laila
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