First-principle study on quintuple-atomic-layer Janus MTeSiX<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si34.svg" display="inline" id="d1e1786"><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> (M= Mo, W; X=N, P, As) monolayers with intrinsic Rashba spin-splitting and Mexican hat dispersion-Reference-Cited by-同舟云学术

First-principle study on quintuple-atomic-layer Janus MTeSiX2 (M= Mo, W; X=N, P, As) monolayers with intrinsic Rashba spin-splitting and Mexican hat dispersion

Published:2022-12 Issue: Volume:152 Page:107061
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Rezavand Amirhossein,Ghobadi Nayereh^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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