Nanostructure, optical and electrical response of gamma ray radiated PdS/p-Si heterojunction-Reference-Cited by-同舟云学术

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Nanostructure, optical and electrical response of gamma ray radiated PdS/p-Si heterojunction

Published:2021-02 Issue: Volume:122 Page:105474
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ali Syed Mansoor,AlGarawi M.S.,Ud-Din Khan Salah,Aldawood S.

Funder

Deputyship for Research and Innovation, “Ministry of Education” in Saudi Arabia

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference47 articles.

1. Electrical and Magnetic Properties of Sulfides

2. Enhanced visible-light photoactivity of La-doped ZnS thin films

3. Investigation on type-II Cu2S–CdS core/shell nanocrystals: synthesis and characterization

4. Improved Performance of Ni- and Co-YSZ Anodes via Sulfidation to NiS- and CoS-YSZ. Effects of Temperature on Electrokinetic Parameters

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation;Materials Science in Semiconductor Processing;2024-06

2. Controllable growth of wafer-scale PdS and PdS₂ nanofilms via chemical vapor deposition combined with an electron beam evaporation technique;Journal of Semiconductors;2023-12-01

3. Modification of CsPbBr3/p-Si Heterojunction Properties using Gamma Ray Irradiation;Silicon;2023-11-30

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