Optimization of enhancement mode P-type Mg-doped In0.2Ga0.8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits

Author:

Tarauni Yusuf U.,Thiruvadigal D. John,Joseph Bijo,Mohanbabu A.

Funder

Centre for Material Science and Nano devices

Department of Physics & Nanotechnology

Faculty of Engineering and Technology

SRM Institute of Science & Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. Electric performance of AlGaN/GaN heterojunction devices: a full-quantum study;Lucci,2015

2. Low temperature ICP-CVD SiNx as gate dielectric for GaN-based MIS-HEMTs;Dutta;IEEE Trans. Electron Devices,2016

3. Threshold voltage engineering in GaN-based HFETs: a systematic study with the threshold voltage reaching more than 2 V;Hahn;IEEE Trans. Electron Devices,2014

4. Dhrubes Biswas "cap layer engineering: performance evaluation of E-mode InGaN/AlGaN/GaN HEMT;Majumdar,2015

5. GaN HEMTs with p-GaN gate: field- and time-dependent degradation;Menegheso;Proc. SPIE,2017

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