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Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions irradiations

  • Published:2017-06 Issue: Volume:64 Page:95-100
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Ahmad Ishaq,Madhuku M.,Sadaf Adeela,Khan Shakil,Hussain Javaid,Ali Awais,Wan D.,Ilyas S.Z.,Mola G.,Waheed Abdul,Rasheed Muhammad Asim

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-Powered Photodetectors Based on InGaN/PdO PN Heterojunctions for Visible Light Communication;IEEE Electron Device Letters;2024-07

2. Investigation of gradient band gap in Cu2ZnSnS4 thin films with residual strain;Current Applied Physics;2024-02

3. Effects of Cu+ ion implantation on band gap and Raman shift of Cu2ZnSnS4 thin films;Current Applied Physics;2023-06

4. Junction temperature of 260 nm AlGaN UVC micro-LEDs under different irradiated Ta fluences;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

5. Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures;Microelectronics International;2022-06-10
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