A low-cost copper oxide thin film memristive device based on successive ionic layer adsorption and reaction method-Reference-Cited by-同舟云学术

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A low-cost copper oxide thin film memristive device based on successive ionic layer adsorption and reaction method

Published:2017-11 Issue: Volume:71 Page:102-108
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Pawar P.S.,Tikke R.S.,Patil V.B.,Mullani N.B.,Waifalkar P.P.,Khot K.V.,Teli A.M.,Sheikh A.D.,Dongale T.D.

Funder

School of Nanoscience and Biotechnology, Shivaji University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference39 articles.

1. Computation: Finite and Infinite Machines;Minsky,1967

2. A logical calculus of the ideas immanent in nervous activity

3. Integration of nanoscale memristor synapses in neuromorphic computing architectures

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