Impurity-induced enhancement of parity-forbidden optical intracenter transitions of shallow donors in silicon
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference30 articles.
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3. Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon;Pavlov;Phys. Rev. B,2008
4. Some rules of spectral structure;Laporte;J. Opt. Soc. Am.,1925
5. Optical study of interacting donors in semiconductors;Thomas;Phys. Rev. B,1981
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1. Oscillator strengths, intracenter absorption and photoionization cross sections of optical transitions of shallow donors in silicon;Physical Review Materials;2024-05-08
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