Impact of Si(100) doping methods on TiSi2 formation in vertical and horizontal FET structure areas with increasing aspect ratio-Reference-Cited by-同舟云学术

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Impact of Si(100) doping methods on TiSi2 formation in vertical and horizontal FET structure areas with increasing aspect ratio

Published:2020-04 Issue: Volume:109 Page:104913
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Hößler Diana

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Cost-efficient sub-lithographic patterning with tilted-ion implantation (TII);Kim,2018

2. Design of self-aligned 3.3-kV DMOSFET using tilted ion implantation;Morikawa,2017

3. VLSI Science and Technology/1982: Proceedings of the First International Symposium on Very Large Scale Integration Science and Technology, Electrochemical Society;Dell'Oca,1982

4. Effects of ion implantation doping on the formation of TiSi2;Park;J. Vac. Sci. Technol. A: Vac. Surf. Films,1984

5. Rapid thermal processing reliability of titanium silicide implanted with arsenic, boron and phosphorus;La Via;Appl. Surf. Sci.,1991

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