Fabrication process not limited by the lithography resolution of lateral phase change memory
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Reversible electrical switching phenomena in disordered structure;Ovshinsky;Phys. Rev. Lett.,1968
2. Phase-change random access memory: a scalable technology;Raoux;IBM J. Res. Dev.,2008
3. Low-cost and nanoscale non-volatile memory concept for future silicon chips;Lankhost;Nat. Mater.,2005
4. Electrical characterization of Ge–Sb–Te phase change nano-pillars using conductive atomic force microscopy;Byeong-JuBae;Semicond. Sci. Technol.,2009
5. Threshold field of phase change memory materials measured using phase change bridge devices;Raoux;Appl. Phys. Lett.,2009
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