Higher electrical activation of ion-implanted Si over S in GaSb epitaxial layers-Reference-Cited by-同舟云学术

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Higher electrical activation of ion-implanted Si over S in GaSb epitaxial layers

Published:2020-08 Issue: Volume:115 Page:105107
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Pandey Rakesh Kumar,Mishra Puspashree,Kaushik Janesh Kumar,Pandey Akhilesh,Raman R.,Devi Ksh Devarani,Rath Shyama

Funder

Inter University Accelerator Centre (IUAC), Delhi

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

1. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review

2. Single mode GaSb diode lasers for sensor applications in a long wavelength regime

3. Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection

4. Terahertz electroluminescence from GaSb∕AlSb quantum cascade laser

5. Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Si ion implantation study of InAs/GaSb type II superlattice materials;J INFRARED MILLIM W;2024

2. Effects of Si ion implantation on the surface and electrical characteristics of epitaxial GaSb;Vacuum;2022-04

3. Silicon-ion implantation induced doping and nanoporosity in molecular beam epitaxy grown GaSb epitaxial films;Journal of Vacuum Science & Technology A;2021-07

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