Author:
Payet Anthony,Luce Flavia Piegas,Curfs Caroline,Mathieu Benoît,Sklénard Benoît,Barbé Jean-Charles,Batude Perrine,Joblot Sylvain,Tavernier Clément,Colombeau Benjamin,Guissi Sofiene,Martin-Bragado Ignacio,Gergaud Patrice
Funder
COMPOSE3 FP7-ICT European
Spanish Ministry of Economy and Competitiveness
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. B. Sklenard, P. Batude, L. Pasini, C. Fenouillet-Beranger, B. Previtali, M. Casse, et al. Low temperature junction formation by solid phase epitaxy on thin film devices: atomistic modeling and experimental achievements, in: 2014 International Workshop on Junction Technology (IWJT), 2014, pp. 1–6. http://dx.doi.org/10.1109/IWJT.2014.6842024
2. I. Synopsys, Release j.2014-09-sp2. Sprocess simulator Release J2014-09-SP2, 2015.
3. Theory of strain relaxation for epitaxial layers grown on substrate of a finite dimension;Huang;Phys. Rev. Lett.,2000
4. Damage induced through megavolt arsenic implantation into silicon;Byrne;Appl. Phys. Lett.,1982
5. Damage accumulation during ion implantation of unstrained Si1-xGex alloy layers;Haynes;Appl. Phys. Lett.,1992
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献