First principles study of Mg2X (X=Si, Ge, Sn, Pb): Elastic, optoelectronic and thermoelectric properties-Reference-Cited by-同舟云学术

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First principles study of Mg2X (X=Si, Ge, Sn, Pb): Elastic, optoelectronic and thermoelectric properties

Published:2015-12 Issue: Volume:40 Page:429-435
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Murtaza G.,Sajid A.,Rizwan M.,Takagiwa Y.,Khachai H.,Jibran M.,Khenata R.,Omran S. Bin

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference42 articles.

1. Thermodynamic properties of Mg2Si and Mg2Ge investigated by first principles method

2. Electronic and optical properties of the antifluorite semiconductors Be2C and Mg2X (, Si, Ge) under hydrostatic pressure

3. Convergence of Conduction Bands as a Means of Enhancing Thermoelectric Performance ofn-TypeMg2Si1−xSnxSolid Solutions

4. Predictions of the structural, electronic and thermodynamic properties of the anti-fluorite-type Mg2Sn under pressure from first principles

5. Lattice Dynamics ofMg2Pb at Room Temperature

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1. Morphology and properties of Mg2Si phase modified by Ge in Mg-Si alloys;Journal of Alloys and Compounds;2024-07

2. Ab-initio insights into the mechanical, phonon, bonding, electronic, optical and thermal properties of hexagonal W2N3 for prospective applications;Heliyon;2024-07

3. Morphology and Properties of Mg2Si Phase Modified by Pb in As-Cast Mg-2.5Si-xPb Alloys;Materials;2024-04-15

4. Response of Mg₂X (X = Si, Ge and Sn) compounds to extreme uniaxial compression: first-principles calculations;Modelling and Simulation in Materials Science and Engineering;2024-01-22

5. Influence of Ge to the formation of defects in epitaxial Mg₂Sn_1−xGe_x thermoelectric thin films;Japanese Journal of Applied Physics;2024-01-05

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