Study of Ge–Sb–Te and Ge–Te cocktail sources to improve an efficiency of multi-line CVD for phase change memory-Reference-Cited by-同舟云学术

Study of Ge–Sb–Te and Ge–Te cocktail sources to improve an efficiency of multi-line CVD for phase change memory

Published:2015-12 Issue: Volume:40 Page:50-57
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Jeong Jin Hwan,Park Jun Hyuk,Lee Yeong Min,Hwang Uk,Kim Hyung Keun,Kil Deok Sin,Choi Doo Jin^ORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

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5. Investigation on Sb-rich Sb–Se–Te phase-change material for phase change memory application

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