Author:
Ohtsuka K.,Matsuno Y.,Hase Y.,Sugimoto H.,Fujihira K.,Tarui Y.,Imaizumi M.,Takami T.,Ozeki T.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Low power-loss 4H–SiC Schottky rectifiers with high blocking voltage;Itoh;Inst Phys Conf Ser,1996
2. Kimoto T, Wahab Q, Ellison A, Forsberg U, Tuiminen M, Yakimova R, Henry A, Yanzen E. High-voltage (>2.5 kV) 4H–SiC Schottky rectifiers processed on hot-wall CVD and high-temperature CVD layers. Mat Sci Forum 1998;364–368:921.
3. Minimization of electric field enhancement at electrode edge by surface high resistive layer in Ti/4H–SiC Schottky barrier diodes;Ohtsuka;Mat Sci Forum,2002
4. Ionization rate and critical fields in 4H–SiC junction diodes;Konstantinov;Mat Sci Forum,1998
5. Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H–SiC;Skromme;Mat Sci Forum,2000
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献