Effect of radial grooves pads on copper chemical mechanical polishing

Author:

Bae Chulwoo,Oh Shinil,Kim Juhwan,Kwak Donggeon,Oh Seungjun,Kim TaesungORCID

Funder

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. Chemical‐mechanical polishing for fabricating patterned W metal features as chip interconnects;Kaufman;J. Electrochem. Soc.,1991

2. Application of chemical mechanical polishing to the fabrication of VLSI circuit interconnections;Patrick;J. Electrochem. Soc.,1991

3. A variable-size shallow trench isolation (STL) technology with diffused sidewall doping for submicron CMOS;Davari,1988

4. Advances in characterization of CMP consumables;Moinpour;MRS Bull.,2002

5. Material removal mechanism in chemical mechanical polishing: theory and modeling;Luo;IEEE Trans. Semicond. Manuf.,2001

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Research on the shear thickening polishing CaF2 with textured hollow polishing tool;Journal of Manufacturing Processes;2024-06

2. INVESTIGATION OF THERMAL MANAGEMENT DURING CHEMICAL MECHANICAL POLISHING PROCESS;Proceeding of International Heat Transfer Conference 17;2023

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