A Monté Carlo simulation study of high-dose and low-energy boron implantation into LPCVD-NiDoS polycrystalline thin films-Reference-Cited by-同舟云学术

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A Monté Carlo simulation study of high-dose and low-energy boron implantation into LPCVD-NiDoS polycrystalline thin films

Published:2008-06 Issue:3 Volume:11 Page:71-80
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Merabet S.,Boukezzata M.,Temple-Boyer P.,Scheid E.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference40 articles.

1. VLSI technology;Sze,1988

2. Ryssel H. Ion implantation technique. Springer Series in Electro-physics, vol. 10. Berlin: Springer; 1982.

3. Poly-Si TFT device and their application to LCD's;Firester;Jpn Display,1997

4. Polysilicon TFT circuit design and performances;Lewis;IEEE J Solid-State Circuits,1992

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of boron profiles as function of nitrogen content in silicon;Thin Solid Films;2019-11

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