The stability of electrical characteristics of Ti/n-Si/Ag , Ti/n-Si/Cu and Ti/n-Si/AgCu diodes prepared under the same conditions with respect to increasing aging time-Reference-Cited by-同舟云学术

The stability of electrical characteristics of Ti/n-Si/Ag , Ti/n-Si/Cu and Ti/n-Si/AgCu diodes prepared under the same conditions with respect to increasing aging time

Published:2017-09 Issue: Volume:68 Page:186-192
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Taşer A.,Güzeldir B.,Sağlam M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Metal-Semiconductor Schottky Barrier Junctions and Their Applications;Sharma,1984

2. Fundamentals of Solid-State Electronics;Sah,1991

3. Physics of Semiconductor Devices;Sze,1981

4. Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts

5. Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model

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