Physical characteristics of NaTaO3Under pressure for electronic devices-Reference-Cited by-同舟云学术

Physical characteristics of NaTaO3Under pressure for electronic devices

Published:2021-10 Issue: Volume:133 Page:105976
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Riaz Sadia,Yaseen Muhammad^ORCID,Butt Mehwish Khalid,Mubashir Shanza^ORCID,Iqbal Javed,Altowyan Abeer S.,Dahshan A.,Murtaza Adil,Iqbal Munawar,Laref A.

Funder

King Khalid University

Princess Nourah bint Abdulrahman University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference37 articles.

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5. A DFT study of structural, magnetic, elastic and optoelectronic properties of lanthanide based XAlO3 (X= Nd, Gd) compounds;Butt;Journal of Materials Research and Technology,2020

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