Author:
Srivastava Ajay K.,Bhardwaj Ashutosh,Ranjan Kirti,Namrata ,Chatterji Sudeep,Shivpuri R.K.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference5 articles.
1. Sze SM. VLSI technology. New York: McGraw-Hill Book Company; 1988. p. 340–61.
2. Chatterji S, Bhardwaj A, Ranjan K, Namarta, Srivastava AK, Shivpuri RK. Annealing behaviour of boron implanted defects in Si detector: impact on breakdown performance. Eur Phys J Appl 2002;17:223–32.
3. Beanland DG. Electrical, electron microscope studies of boron molecular ion into silicon. In: Chernow F, Borders J, Brice D, editors. Fifth International Conference on Ion Implantation. New York: Plenum, 1976. p. 31–8.
4. Fair RB et al., J. Electrochem Soc 1997;144(2):708–17.
5. TMA TSUPREM-4V. 1999.2, User manual, 1999.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献