Polarity control of GaN epilayers grown on ZnO templates-Reference-Cited by-同舟云学术

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Polarity control of GaN epilayers grown on ZnO templates

Published:2003-10 Issue:5-6 Volume:6 Page:519-521
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Suzuki Takuma,Ko Hang-Ju,Setiawan Agus,Kim Jung-Jin,Saitoh Koh,Terauchi Masami,Yao Takafumi

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN;Nakamura;J Mater Res,1999

2. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates;Sheppard;IEEE Electron Dev Lett,1999

3. Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy;Usui;Jpn J Appl Phys,1997

4. Essential change in crystal qualities of GaN films by controlling lattice polarity in molecular beam epitaxy;Shen;Jpn J Appl Phys,2000

5. Polarity control in MBE growth of III-nitrides, and its device application;Okumura;Curr Appl Phys,2002

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarity Control in Growing Highly Ga-Doped ZnO Nanowires with the Vapor–Liquid–Solid Process;ACS Applied Materials & Interfaces;2018-11-06

2. Wet-Chemical Etching of GaN: Underlying Mechanism of a Key Step in Blue and White LED Production;ChemistrySelect;2018-02-06

3. Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy;Microscopy Research and Technique;2017-02-28

4. Properties of sol–gel synthesized n-ZnO/n-GaN (0001) isotype heterojunction;Materials Chemistry and Physics;2014-01

5. Growth and Characterization of GaN/ZnO Heteroepitaxy and ZnO-Based Hybrid Devices;Zinc Oxide Materials for Electronic and Optoelectronic Device Applications;2011-03-28

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