Study on post-deposition annealing influenced contribution of hole and electron trapping to threshold voltage stability in organic field effect transistors-Reference-Cited by-同舟云学术

Study on post-deposition annealing influenced contribution of hole and electron trapping to threshold voltage stability in organic field effect transistors

Published:2015-02 Issue: Volume:30 Page:18-24
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

N. Padma,Sawant Shilpa N.,Sen Shashwati

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Influence of the substrate temperature during deposition on film characteristics of copper phthalocyanine and field-effect transistor properties

2. Suppression of DC bias stress-induced degradation of organic field-effect transistors using postannealing effects

3. Influence of self-assembly monolayers on the characteristics of copper phthalacyanine thin film transistor

4. Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

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