Investigation of microscale and nanoscale twin lamellae in monocrystalline silicon grown by Czochralski method
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Mono-crystalline growth in directional solidification of silicon with different orientation and splitting of seed crystals;Trempa;J. Cryst. Growth,2012
2. Melt-interface mechanism for generation of silicon-carbide microdefects in silicon;Kalejs;J. Cryst. Growth,1986
3. The mechanism of silicon modification in aluminum-silicon alloys - impurity induced twinning;Lu;Metall. Trans. A,1987
4. Origin of Growth Twins during Czochralski Growth of Heavily Doped, Dislocation-free Single Crystal Silicon;Kearns,2019
5. Formation mechanism of twin boundaries during crystal growth of silicon;Kutsukake;Scripta Mater.,2011
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