Mechanism analysis and process optimization of nanogrinding single-crystal SiC-Reference-Cited by-同舟云学术

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Mechanism analysis and process optimization of nanogrinding single-crystal SiC

Published:2024-06 Issue: Volume:175 Page:108218
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Xia Jiangnan,Yan Qiusheng,Pan Jisheng,Wu Lijie,Chen Yuanjing,Wang Tao

Funder

National Key Research and Development Program of China

Basic and Applied Basic Research Foundation of Guangdong Province

National Natural Science Foundation of China

Guangdong University of Technology

Publisher

Elsevier BV

Reference29 articles.

1. Silicon carbide in contention;Madar;Nature,2004

2. Silicon carbide as a platform for power electronics;Eddy;Science,2009

3. Effect of abrasive on tribological behavior and polishing effect of β-Ga2O3(100) substrate;Wang;Mater. Sci. Semicond. Process.,2024

4. First-principles investigation of effects of defects on the physical properties of 3C-SiC under high temperatures and pressures;Fan;J. Mater. Res. Technol.,2022

5. Thermal conductivity of GaN, 71GaN, and SiC from 150 K to 850 K;Zheng;Phys. Rev. Mater.,2019

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