Corrigendum to “Atomic study on deformation behavior and anisotropy effect of 4H–SiC during nanoindentation” [Mater. Sci. Semicond. Process. 163 (2023) 107580]
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Published:2023-11
Issue:
Volume:166
Page:107727
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ISSN:1369-8001
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Container-title:Materials Science in Semiconductor Processing
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language:en
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Short-container-title:Materials Science in Semiconductor Processing
Author:
Zhu Bo,Zhao Dan,Niu Yihan,Zhao Hongwei
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science